Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RSQ020N03TR
Part Number | RSQ020N03TR |
Datasheet | RSQ020N03TR datasheet |
Description | MOSFET N-CH 30V 2A TSMT6 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 134 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 600mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSMT6 (SC-95) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |