Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIR180DP-T1-RE3
Part Number | SIR180DP-T1-RE3 |
Datasheet | SIR180DP-T1-RE3 datasheet |
Description | MOSFET N-CHAN 60V POWERPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 32.4A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.05 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4030pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 5.4W (Ta), 83.3W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |