Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK4R4P06PL,RQ
Part Number | TK4R4P06PL,RQ |
Datasheet | TK4R4P06PL,RQ datasheet |
Description | MOSFET N-CHANNEL 60V 58A DPAK |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIX-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 48.2nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3280pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 87W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |