Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
2N6756 |
Datasheet |
2N6756 datasheet |
Description |
MOSFET N-CH 100V TO-3 |
Manufacturer |
Microsemi Corporation |
Series |
- |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
210 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
- |
FET Feature |
- |
Power Dissipation (Max) |
4W (Ta), 75W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-204AA |
Package / Case |
TO-204AA, TO-3 |
Latest Products for Transistors - FETs, MOSFETs - Single
Renesas Electronics America
MOSFET N-CH 30V 40A WPAK
Renesas Electronics America
MOSFET N-CH 30V 35A WPAK
Renesas Electronics America
MOSFET N-CH 30V 30A WPAK
Renesas Electronics America
MOSFET N-CHANNEL 200V 20A WPAK
Renesas Electronics America
MOSFET N-CH 400V 3A TO92
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET P-CH VDSS-2