Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPDD60R050G7XTMA1
Part Number | IPDD60R050G7XTMA1 |
Datasheet | IPDD60R050G7XTMA1 datasheet |
Description | MOSFET NCH 650V 135A PG-HDSOP-10 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ G7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 15.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 800µA |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2670pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-HDSOP-10-1 |
Package / Case | 10-PowerSOP Module |