Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFB4227PBF
Product Introduction
IRFB4227PBF
- Part Number
- IRFB4227PBF
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 200V 65A TO-220AB
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- HEXFET®
- Quantity
- 1232pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IRFB4227PBF |
| Description | MOSFET N-CH 200V 65A TO-220AB |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 46A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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