Product Introduction
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Product Specifications
Part Number |
IRF7464 |
Datasheet |
IRF7464 datasheet |
Description |
MOSFET N-CH 200V 1.2A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
730 mOhm @ 720mA, 10V |
Vgs(th) (Max) @ Id |
5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
280pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SO |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
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