Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZ926DT-T1-GE3
Part Number | SIZ926DT-T1-GE3 |
Datasheet | SIZ926DT-T1-GE3 datasheet |
Description | MOSFET 2 N-CH 25V 8-POWERPAIR |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V, 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 925pF @ 10V, 2150pF @ 10V |
Power - Max | 20.2W, 40W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (6x5) |