Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPH1R712MD,L1Q
Part Number | TPH1R712MD,L1Q |
Datasheet | TPH1R712MD,L1Q datasheet |
Description | MOSFET P-CH 20V 60A 8SOP ADV |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 30A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 182nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 10900pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 78W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP Advance (5x5) |
Package / Case | 8-PowerVDFN |