Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMG7N65SJ3
Product Introduction
DMG7N65SJ3
- Part Number
- DMG7N65SJ3
- Manufacturer/Brand
- Diodes Incorporated
- Description
- MOSFET BVDSS 501V 650V TO251
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- Automotive, AEC-Q101
- Quantity
- 5079pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | DMG7N65SJ3 |
| Datasheet | DMG7N65SJ3 datasheet |
| Description | MOSFET BVDSS 501V 650V TO251 |
| Manufacturer | Diodes Incorporated |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 886pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 |
| Package / Case | TO-251-3, IPak, Short Leads |
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