Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPP02N60C3HKSA1
Part Number | SPP02N60C3HKSA1 |
Datasheet | SPP02N60C3HKSA1 datasheet |
Description | MOSFET N-CH 650V 1.8A TO-220AB |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |