Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GP1M007A090H

Product Introduction

GP1M007A090H

Part Number
GP1M007A090H
Manufacturer/Brand
Global Power Technologies Group
Description
MOSFET N-CH 900V 7A TO220
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4493pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number GP1M007A090H
Description MOSFET N-CH 900V 7A TO220
Manufacturer Global Power Technologies Group
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1969pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

Latest Products for Transistors - FETs, MOSFETs - Single

IRFU7540PBF

Infineon Technologies

MOSFET N CH 60V 90A I-PAK

IRFU7546PBF

Infineon Technologies

MOSFET N CH 60V 56A I-PAK

IRFU7740PBF

Infineon Technologies

MOSFET N CH 75V 87A I-PAK

IRFU7746PBF

Infineon Technologies

MOSFET N CH 75V 56A I-PAK

IRFU9014N

Infineon Technologies

MOSFET P-CH 60V 5.1A I-PAK

IRFU9024N

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

Related Products