
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IRF7351PBF

| Part Number | IRF7351PBF | 
| Datasheet | IRF7351PBF datasheet | 
| Description | MOSFET 2N-CH 60V 8A 8-SOIC | 
| Manufacturer | Infineon Technologies | 
| Series | HEXFET® | 
| Part Status | Discontinued at Digi-Key | 
| FET Type | 2 N-Channel (Dual) | 
| FET Feature | Logic Level Gate | 
| Drain to Source Voltage (Vdss) | 60V | 
| Current - Continuous Drain (Id) @ 25°C | 8A | 
| Rds On (Max) @ Id, Vgs | 17.8 mOhm @ 8A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 50µA | 
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 30V | 
| Power - Max | 2W | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 
| Supplier Device Package | 8-SO |