Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / C2M1000170D
Part Number | C2M1000170D |
Datasheet | C2M1000170D datasheet |
Description | MOSFET N-CH 1700V 4.9A TO247 |
Manufacturer | Cree/Wolfspeed |
Series | Z-FET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700V |
Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 2A, 20V |
Vgs(th) (Max) @ Id | 2.4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 20V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 191pF @ 1000V |
FET Feature | - |
Power Dissipation (Max) | 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |