Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDG326P

Product Introduction

FDG326P

Part Number
FDG326P
Manufacturer/Brand
ON Semiconductor
Description
MOSFET P-CH 20V 1.5A SC70-6
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
PowerTrench®
Quantity
9640pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FDG326P
Datasheet FDG326P datasheet
Description MOSFET P-CH 20V 1.5A SC70-6
Manufacturer ON Semiconductor
Series PowerTrench®
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 467pF @ 10V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-88 (SC-70-6)
Package / Case 6-TSSOP, SC-88, SOT-363

Latest Products for Transistors - FETs, MOSFETs - Single

TK7A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 7A TO-220SIS

TK7A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 6.8A TO-220SIS

TK7A90E,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 900V TO220SIS

TK8A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A TO-220SIS

TK8A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 7.8A TO-220SIS

TK9A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 9.3A TO-220SIS