Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
FDG326P |
Datasheet |
FDG326P datasheet |
Description |
MOSFET P-CH 20V 1.5A SC70-6 |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
140 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
7nC @ 4.5V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
467pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
750mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SC-88 (SC-70-6) |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Latest Products for Transistors - FETs, MOSFETs - Single
Toshiba Semiconductor and Storage
MOSFET N CH 600V 7A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 6.8A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 900V TO220SIS
Toshiba Semiconductor and Storage
MOSFET N CH 600V 8A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 7.8A TO-220SIS
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 9.3A TO-220SIS