
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI4825DY-T1-GE3

| Part Number | SI4825DY-T1-GE3 | 
| Datasheet | SI4825DY-T1-GE3 datasheet | 
| Description | MOSFET P-CH 30V 8.1A 8-SOIC | 
| Manufacturer | Vishay Siliconix | 
| Series | TrenchFET® | 
| Part Status | Obsolete | 
| FET Type | P-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 11.5A, 10V | 
| Vgs(th) (Max) @ Id | 3V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V | 
| Vgs (Max) | ±25V | 
| Input Capacitance (Ciss) (Max) @ Vds | - | 
| FET Feature | - | 
| Power Dissipation (Max) | 1.5W (Ta) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 8-SO | 
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |