Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI7119DN-T1-GE3
Part Number | SI7119DN-T1-GE3 |
Datasheet | SI7119DN-T1-GE3 datasheet |
Description | MOSFET P-CH 200V 3.8A 1212-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 666pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Package / Case | PowerPAK® 1212-8 |