Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
2N6661 |
Datasheet |
2N6661 datasheet |
Description |
MOSFET N-CH 90V 350MA 3TO-39 |
Manufacturer |
Microchip Technology |
Series |
- |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
90V |
Current - Continuous Drain (Id) @ 25°C |
350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
4 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 24V |
FET Feature |
- |
Power Dissipation (Max) |
6.25W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-39 |
Package / Case |
TO-205AD, TO-39-3 Metal Can |
Latest Products for Transistors - FETs, MOSFETs - Single
Microsemi Corporation
MOSFET N-CH 1200V 19A SOT-227
Microsemi Corporation
MOSFET N-CH 800V 58A SOT-227
Microsemi Corporation
MOSFET N-CH 1000V 20A SOT-227
Microsemi Corporation
MOSFET N-CH 100V 142A SOT227
Microsemi Corporation
MOSFET N-CH 600V 42A SOT-227
Microsemi Corporation
MOSFET N-CH 1200V 34A SOT-227