Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / TPC8211(TE12L,Q,M)
Part Number | TPC8211(TE12L,Q,M) |
Datasheet | TPC8211(TE12L,Q,M) datasheet |
Description | MOSFET 2N-CH 30V 5.5A SOP8 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.5A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 10V |
Power - Max | 450mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package | 8-SOP (5.5x6.0) |