Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
FDD3860 |
Datasheet |
FDD3860 datasheet |
Description |
MOSFET N-CH 100V 6.2A DPAK |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
36 mOhm @ 5.9A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
31nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1740pF @ 50V |
FET Feature |
- |
Power Dissipation (Max) |
3.1W (Ta), 69W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D-PAK (TO-252AA) |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Latest Products for Transistors - FETs, MOSFETs - Single
Infineon Technologies
MOSFET N-CH 80V 30A DPAK
ON Semiconductor
MOSFET P-CH 40V 8.4A DPAK
ON Semiconductor
MOSFET N-CH 600V DPAK-3
ON Semiconductor
MOSFET N-CH 600V 5.5A DPAK-3
ON Semiconductor
NMOS DPAK 40V 7.1 MOHM
ON Semiconductor
MOSFET N-CH 800V 1A DPAK