Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PHD34NQ10T,118
Part Number | PHD34NQ10T,118 |
Description | MOSFET N-CH 100V 35A DPAK |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1704pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |