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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTM12N100
Part Number | IXTM12N100 |
Description | POWER MOSFET TO-3 |
Manufacturer | IXYS |
Series | GigaMOS™ |
Part Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-204AA |
Package / Case | TO-204AA, TO-3 |