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| Part Number | SPI80N10L |
| Datasheet | SPI80N10L datasheet |
| Description | MOSFET N-CH 100V 80A I2PAK |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 58A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |