Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFX21N100Q
Part Number | IXFX21N100Q |
Datasheet | IXFX21N100Q datasheet |
Description | MOSFET N-CH 1000V 21A PLUS 247 |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 500W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 |
Package / Case | TO-247-3 |