Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQJQ900E-T1_GE3
Part Number | SQJQ900E-T1_GE3 |
Datasheet | SQJQ900E-T1_GE3 datasheet |
Description | MOSFET 2 N-CH 40V POWERPAK8X8 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5900pF @ 20V |
Power - Max | 75W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 8 x 8 Dual |
Supplier Device Package | PowerPAK® 8 x 8 Dual |