Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK12E80W,S1X
Part Number | TK12E80W,S1X |
Datasheet | TK12E80W,S1X datasheet |
Description | MOSFET N-CH 800V 11.5A TO220 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 570µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 300V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Operating Temperature | 150°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |