Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIS903DN-T1-GE3
Part Number | SIS903DN-T1-GE3 |
Datasheet | SIS903DN-T1-GE3 datasheet |
Description | MOSFET DUAL P-CHAN POWERPAK 1212 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen III |
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Rds On (Max) @ Id, Vgs | 20.1 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2565pF @ 10V |
Power - Max | 2.6W (Ta), 23W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |