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| Part Number | SIS903DN-T1-GE3 |
| Datasheet | SIS903DN-T1-GE3 datasheet |
| Description | MOSFET DUAL P-CHAN POWERPAK 1212 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen III |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 20.1 mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565pF @ 10V |
| Power - Max | 2.6W (Ta), 23W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |