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Part Number | SI1917EDH-T1-E3 |
Datasheet | SI1917EDH-T1-E3 datasheet |
Description | MOSFET 2P-CH 12V 1A SC70-6 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 1A |
Rds On (Max) @ Id, Vgs | 370 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 100µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 570mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-70-6 (SOT-363) |