Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DMN61D8LVTQ-13
Part Number | DMN61D8LVTQ-13 |
Datasheet | DMN61D8LVTQ-13 datasheet |
Description | MOSFET 2N-CH 60V 0.63A TSOT26 |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 630mA |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 0.74nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 12.9pF @ 12V |
Power - Max | 820mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | TSOT-26 |