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Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMG4T2R
Part Number | EMG4T2R |
Description | TRANS 2NPN PREBIAS 0.15W EMT5 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | - |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package | EMT5 |