
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / BCR119SE6327BTSA1

| Part Number | BCR119SE6327BTSA1 | 
| Datasheet | BCR119SE6327BTSA1 datasheet | 
| Description | TRANS 2NPN PREBIAS 0.25W SOT363 | 
| Manufacturer | Infineon Technologies | 
| Series | - | 
| Part Status | Obsolete | 
| Transistor Type | 2 NPN - Pre-Biased (Dual) | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 4.7 kOhms | 
| Resistor - Emitter Base (R2) | - | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V | 
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | 
| Current - Collector Cutoff (Max) | - | 
| Frequency - Transition | 150MHz | 
| Power - Max | 250mW | 
| Mounting Type | Surface Mount | 
| Package / Case | 6-VSSOP, SC-88, SOT-363 | 
| Supplier Device Package | PG-SOT363-6 |