Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTB30N100L
Part Number | IXTB30N100L |
Datasheet | IXTB30N100L datasheet |
Description | MOSFET N-CH 1000V 30A PLUS264 |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 20V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 545nC @ 20V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 800W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS264™ |
Package / Case | TO-264-3, TO-264AA |