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Part Number | NVMFD5C650NLT1G |
Datasheet | NVMFD5C650NLT1G datasheet |
Description | MOSFET 2N-CH 60V 111A S08FL |
Manufacturer | ON Semiconductor |
Series | Automotive, AEC-Q101 |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 111A (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 98µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2546pF @ 25V |
Power - Max | 3.5W (Ta), 125W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |