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Product Introduction
BSC019N06NSATMA1
- Part Number
- BSC019N06NSATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- DIFFERENTIATED MOSFETS
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- OptiMOS™
- Quantity
- 52pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | BSC019N06NSATMA1 |
| Datasheet | BSC019N06NSATMA1 datasheet |
| Description | DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.95 mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 74µA |
| Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5.25nF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN |
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