Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SQJ962EP-T1-GE3
Part Number | SQJ962EP-T1-GE3 |
Datasheet | SQJ962EP-T1-GE3 datasheet |
Description | MOSFET 2N-CH 60V 8A 8SO |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8A |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
Power - Max | 25W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |