Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFT20N100P
Part Number | IXFT20N100P |
Datasheet | IXFT20N100P datasheet |
Description | MOSFET N-CH 1000V 20A TO-268 |
Manufacturer | IXYS |
Series | HiPerFET™, PolarP2™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 570 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 126nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 7300pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 660W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268 |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |