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Product Introduction

IPI04CN10N G

Part Number
IPI04CN10N G
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 100A TO262-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
1594pcs Stock Available.

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Product Specifications

Part Number IPI04CN10N G
Datasheet IPI04CN10N G datasheet
Description MOSFET N-CH 100V 100A TO262-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 50V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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