Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFB82N60P
Part Number | IXFB82N60P |
Datasheet | IXFB82N60P datasheet |
Description | MOSFET N-CH 600V 82A PLUS 264 |
Manufacturer | IXYS |
Series | HiPerFET™, PolarHT™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 41A, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS264™ |
Package / Case | TO-264-3, TO-264AA |