Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DMN2014LHAB-7
Part Number | DMN2014LHAB-7 |
Datasheet | DMN2014LHAB-7 datasheet |
Description | MOSFET 2N-CH 20V 9A 6-UDFN |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9A |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V |
Power - Max | 800mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UFDFN Exposed Pad |
Supplier Device Package | U-DFN2030-6 (Type B) |