Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMN95H2D2HCTI
Part Number | DMN95H2D2HCTI |
Datasheet | DMN95H2D2HCTI datasheet |
Description | MOSFET N-CH 950V 6A ITO220AB |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 950V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20.3nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1487pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220AB |
Package / Case | TO-220-3 Full Pack, Isolated Tab |