Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFX24N100F
Part Number | IXFX24N100F |
Datasheet | IXFX24N100F datasheet |
Description | MOSFET N-CH 1000V 24A PLUS247-3 |
Manufacturer | IXYS-RF |
Series | HiPerRF™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 560W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 |
Package / Case | TO-247-3 |