Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI6913DQ-T1-GE3
Part Number | SI6913DQ-T1-GE3 |
Datasheet | SI6913DQ-T1-GE3 datasheet |
Description | MOSFET 2P-CH 12V 4.9A 8-TSSOP |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 4.9A |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 5.8A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |