Product Introduction
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Product Specifications
Part Number |
SISS10ADN-T1-GE3 |
Description |
MOSFET N-CHAN 40 V POWERPAK 1212 |
Manufacturer |
Vishay Siliconix |
Series |
TrenchFET® Gen IV |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
31.7A (Ta), 109A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
2.65 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
61nC @ 10V |
Vgs (Max) |
+20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds |
3030pF @ 20V |
FET Feature |
- |
Power Dissipation (Max) |
4.8W (Ta), 56.8W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® 1212-8S |
Package / Case |
PowerPAK® 1212-8S |
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