Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
IRFI620 |
Datasheet |
IRFI620 datasheet |
Description |
MOSFET N-CH 200V 4.1A TO220FP |
Manufacturer |
Vishay Siliconix |
Series |
- |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
800 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
260pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
30W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220-3 |
Package / Case |
TO-220-3 Full Pack, Isolated Tab |
Latest Products for Transistors - FETs, MOSFETs - Single
Vishay Siliconix
MOSFET N-CH 100V 17A TO220FP
Vishay Siliconix
MOSFET N-CH 100V 17A TO220FP
Rohm Semiconductor
MOSFET N-CH 600V 12A TO-220FM
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 9.7A TO-220SIS
Vishay Siliconix
MOSFET N-CH 500V 2.1A TO220FP
Vishay Siliconix
MOSFET N-CH 500V 4.5A TO220FP