Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STI11NM80
Part Number | STI11NM80 |
Datasheet | STI11NM80 datasheet |
Description | MOSFET N-CH 800V 11A I2PAK-3 |
Manufacturer | STMicroelectronics |
Series | MDmesh™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43.6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK (TO-262) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |