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Part Number | IPD60R180P7SAUMA1 |
Datasheet | IPD60R180P7SAUMA1 datasheet |
Description | MOSFET N-CH 600V 18A TO252-3 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1081pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |