Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI47N10S33AKSA1

Product Introduction

IPI47N10S33AKSA1

Part Number
IPI47N10S33AKSA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 47A TO262-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
SIPMOS®
Quantity
1575pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IPI47N10S33AKSA1
Description MOSFET N-CH 100V 47A TO262-3
Manufacturer Infineon Technologies
Series SIPMOS®
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
FET Feature -
Power Dissipation (Max) 175W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Latest Products for Transistors - FETs, MOSFETs - Single

BSB012NE2LXIXUMA1

Infineon Technologies

MOSFET N-CH 25V 170A WDSON

BSB015N04NX3GXUMA1

Infineon Technologies

MOSFET N-CH 40V 180A 2WDSON

BSB017N03LX3 G

Infineon Technologies

MOSFET N-CH 30V 147A 2WDSON

BSB019N03LX G

Infineon Technologies

MOSFET N-CH 30V 174A 2WDSON

BSB024N03LX G

Infineon Technologies

MOSFET N-CH 30V 145A 2WDSON

BSB044N08NN3GXUMA1

Infineon Technologies

MOSFET N-CH 80V 18A WDSON-2