
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSB044N08NN3GXUMA1

| Part Number | BSB044N08NN3GXUMA1 | 
| Datasheet | BSB044N08NN3GXUMA1 datasheet | 
| Description | MOSFET N-CH 80V 18A WDSON-2 | 
| Manufacturer | Infineon Technologies | 
| Series | OptiMOS™ | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 80V | 
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 90A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 30A, 10V | 
| Vgs(th) (Max) @ Id | 3.5V @ 97µA | 
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 40V | 
| FET Feature | - | 
| Power Dissipation (Max) | 2.2W (Ta), 78W (Tc) | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | MG-WDSON-2, CanPAK M™ | 
| Package / Case | 3-WDSON |