Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSB015N04NX3GXUMA1
Part Number | BSB015N04NX3GXUMA1 |
Datasheet | BSB015N04NX3GXUMA1 datasheet |
Description | MOSFET N-CH 40V 180A 2WDSON |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.5 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 142nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MG-WDSON-2, CanPAK M™ |
Package / Case | 3-WDSON |