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| Part Number | BSZ0904NSIATMA1 | 
| Datasheet | BSZ0904NSIATMA1 datasheet | 
| Description | MOSFET N-CH 30V 40A TSDSON | 
| Manufacturer | Infineon Technologies | 
| Series | OptiMOS™ | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 30V | 
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 30A, 10V | 
| Vgs(th) (Max) @ Id | 2V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 1463pF @ 15V | 
| FET Feature | Schottky Diode (Body) | 
| Power Dissipation (Max) | 2.1W (Ta), 37W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | PG-TSDSON-8-FL | 
| Package / Case | 8-PowerTDFN |